2SC1047

Transistors 2SC1047 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm 5.0±0.2 4.0±0.2 ■ Features 5.1±0.2 Optimum for RF amplification of FM/AM radios High transition frequency fT 0.7±0.2 12.9±0.5 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit / Collector-base voltage (Emitter open) VCBO 30 V e Collector-emitter voltage (Base open) VCEO 20 V c type) Emitter-base voltage (Collector open) VEBO 3 V n d ge. ed Collector current IC 20 mA 2.3±0.2 le sta ntinu Collector power dissipation PC 400 mW a e cyc isco Junction temperature Tj 150 °C life d, d Storage temperature Tstg −55 to +150 °C 0.45+–00..115 2.5+–00..26 2.5+–00..26 0.45+–00..115 1 23 1: Emitter 2: Collector 3: Base TO-92-B1 Package intenntinus followlianngefdoudrisPcroondtiuncuted type ■ Electrical Characteristics Ta = 25°C ± 3°C a o lude e, p Parameter Symbol Conditions Min Typ Max Unit c d inc e typ Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 30 V tinue anc Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 3 V M is con inten Base-emitter voltage VBE VCE = 6 V, IC = 1 mA 0.72 V /Dis ma Forward current transfer ratio * hFE VCE = 6 V, IC = 1 mA 65 260  ce pe, Common-emitter reverse transfer D nan e ty capacitance Cre VCB = 6 V, IE = −1 mA, f = 10.7 MHz 0.8 1 pF ainte nanc Transition frequency M inte Power gain d ma Noise figure fT VCB = 6 V, IE = −1 mA, f = 200 MHz 4...