AOB2918L

AOT2918L/AOB2918L/AOTF2918L 100V N-Channel MOSFET General Description Product Summary The AOT2918L & AOB2918L & AOTF2918L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of RDS(ON) and Crss. In addition, switching behavior is well controlled with a soft recovery body diode.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested TO-220 TO-220F Top View TO-263 D2PAK D 100V 90A < 7mΩ D AOT2918L DS G AOTF2918L S GD G AOB2918L S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT2918L/AOB2918L AOTF2918L Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM 90 70 260 58 45 Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C VDS Spike I 10µs IDSM IAS, IAR EAS, EAR VSPIKE 13 10 35 61 120 TC=25°C Power Dissipation B TC=100°C PD 267 133 41 20 TA=25°C Power Dissipation A TA=70°C PDSM 2.1 1.33 Junction and Storage Temperature Range TJ, TSTG -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbo...