2SC1212

2SC1212, 2SC1212A Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Symbol VCBO VCEO VEBO IC PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25°C Tj Tstg 1 2SC1212 50 50 4 1 0.75 8 150 –55 to +150 2SC1212A 80 80 4 1 0.75 8 150 –55 to +150 Unit V V V A W W °C °C 2SC1212, 2SC1212A Electrical Characteristics (Ta = 25°C) 2SC1212 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO 1 2SC1212A Max — — — 5 200 — 1.0 1.5 — Min 80 80 4 — 60 20 — — — Typ — — — — — — 0.65 0.75 160 Max — — — 5 200 — 1.0 1.5 — V V MHz Unit V V V µA Test conditions I C = 1 mA, IE = 0 I C = 10 mA, RBE = ∞ I E = 1 mA, IC = 0 VCB = 50 V, IE = 0 VCE = 4 V, IC = 50 mA VCE = 4 V, IC = 1 A (pulse test) VCE = 4 V, IC = 50 mA I C = 1 A, IB = 0.1 A (pulse test) VCE = 4 V, IC = 30 mA Min 50 50 4 — 60 20 — — — Typ — — — — — — 0.65 0.75 160 DC current tarnsfer ratio hFE* hFE Base to emitter voltage VBE Collector to emitter saturation voltage VCE(sat) Gain bandwidth product f T Note: B 60 to 120 1. The 2SC1212 and 2SC1212A are grouped by h FE as follows. C 100 to 200 Maximum Collector Dissipation Curve 1.0 Collec...