2SC1213A

2SC1213A(K) Silicon NPN Epitaxial Application Low frequency amplifier Medium speed switching Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1213A (K) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 50 50 4 500 400 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 50 50 4 — 1 Typ — — — — — — 0.64 Max — — — 0.5 320 — — 0.6 1.2 — — — — — Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 1.0 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 3 V, IC = 10 mA VCE = 3 V, IC = 500 mA*2 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio V(BR)EBO I CBO hFE* hFE Base to emitter voltage Collector to emitter saturation voltage Base to emitter satruation voltage Collector output capacitance Gain bandwidth product Turn on time Turn off time Storage time VBE VCE(sat) VBE(sat) Cob fT t on t off t stg 60 10 V V V pF MHz µS µS µS VCE = 3 V, IC = 10 mA I C = 150 mA, IB = 15 mA*2 I C = 150 mA, IB = 15 mA*2 VCB = 10 V, IE = 0, f = 1 MHz VCE = 3 V, IC = 10 mA VCC = 10.3 V I C = 10 IB1 = –10 IB2 = 10 mA — — — — — — — 0.12 0.83 7.0 120 0.25 0.85 0.4 VCC = 5 V I C = IB1 = –IB2 = 20 mA Note...