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2SK4126 Dataheets PDF



Part Number 2SK4126
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description N-Channel Silicon MOSFET
Datasheet 2SK4126 Datasheet2SK4126 Datasheet (PDF)

www.DataSheet.co.kr Ordering number : ENA0748A 2SK4126 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4126 Features • • • General-Purpose Switching Device Applications Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dis.

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www.DataSheet.co.kr Ordering number : ENA0748A 2SK4126 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4126 Features • • • General-Purpose Switching Device Applications Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *2 Avalanche Current *3 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10µs, duty cycle≤1% Tc=25°C (SANYO’s ideal heat dissipation condition)*1 Conditions Ratings 650 ±30 15 48 2.5 170 150 --55 to +150 132 15 Unit V V A A W W °C °C mJ A *1 SANYO’s condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *2 VDD=99V, L=1mH, IAV=15A *3 L≤1mH, single pulse Marking : K4126 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D0507 TI IM TC-00001054 / 61307QB TI IM TC-00000730 No. A0748-1/5 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr 2SK4126 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) ⏐yfs⏐ RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=10mA, VGS=0V VDS=520V, VGS=0V VGS=±30V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=7.5A ID=6A, VGS=10V VDS=30V, f=1MHz VDS=30V, f=1MHz VDS=30V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=200V, VGS=10V, ID=15A VDS=200V, VGS=10V, ID=15A VDS=200V, VGS=10V, ID=15A IS=15A, VGS=0V Ratings min 650 100 ±100 3 4.1 8.2 0.55 1200 208 44 27 80 45 50 45.4 8.3 25.8 0.95 1.3 0.72 5 typ max Unit V µA nA V S Ω pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm (typ) 7503-004 15.6 14.0 4.8 3.2 2.0 2.6 3.5 2.0 1.6 1.3 20.0 15.0 20.0 1.2 1.0 0.6 1 2 3 0.6 1 : Gate 2 : Drain 3 : Source SANYO : TO-3PB 5.45 5.45 Switching Time Test Circuit VIN 10V 0V VIN ID=7.5A RL=26.7Ω VDD=200V 1.4 Avalanche Resistance Test Circuit L ≥50Ω RG D PW=10µs D.C.≤0.5% VOUT 2SK4126 10V 0V G 50Ω VDD 2SK4126 P.G RGS=50Ω S No. A0748-2/5 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr 2SK4126 35 ID -- VDS Tc=25°C 10V 35 ID -- VGS VDS=20V 30 30 Tc= --25°C 25°C 75°C Drain Current, ID -- A 25 8V Drain Current, ID -- A 15V 25 20 20 15 15 10 10 6V 5 5 VGS=5V 0 0 5 10 15 20 25 30 IT11773 1.6 0 0 2 4 6 8 10 12 14 16 18 20 Drain-to-Source Voltage, VDS -- V 2.0 1.8 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V IT11774 RDS(on) -- Tc ID=6A Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 1.6 1.4 1.2 1.0 Static Drain-to-Source O.


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