FM1608B

www.DataSheet.co.kr Preliminary FM1608B 64Kb Bytewide 5V F-RAM Memory Features 64Kbit Ferroelectric Nonvolatile RAM Organized as 8,192 x 8 bits High Endurance 1 Trillion (1012) Read/Writes 38 year Data Retention (@ +75°C) NoDelay™ Writes Advanced High-Reliability Ferroelectric Process Superior to BBSRAM Modules No Battery Concerns Monolithic Reliability True Surface Mount Solution, No Rework Steps Superior for Moisture, Shock, and Vibration Resistant to Negative Voltage Undershoots SRAM & EEPROM Compatible JEDEC 8Kx8 SRAM & EEPROM pinout 70 ns Access Time 130 ns Cycle Time Low Power Operation 15 mA Active Current 25 µA (typ.) Standby Current Industry Standard Configuration Industrial Temperature -40°C to +85°C 28-pin “Green”/RoHS SOIC Package Description The FM1608B is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile but operates in other respects as a RAM. It provides data retention for 38 years while eliminating the reliability concerns, functional disadvantages and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make F-RAM superior to other types of nonvolatile memory. In-system operation of the FM1608B is very similar to other RAM devices. Minimum read- and writecycle times are equal. The F-RAM memory, however, is nonvolatile due to its unique ferroelectric memory process. Unlike BBSRAM, the FM...