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GC9941 Dataheets PDF



Part Number GC9941
Manufacturers MICROSEMI
Logo MICROSEMI
Description (GC9901 - GC9944) Schottky Barrier Diodes
Datasheet GC9941 DatasheetGC9941 Datasheet (PDF)

www.DataSheet.co.kr GC9901 – GC9944 TM ® Schottky Barrier Diodes For Mixers and Detectors RoHS Compliant DESCRIPTION Schottky Barrier devices are currently available in single beamlead, dual “T”, ring quad and bridge quad configurations. Devices are available in monolithic form for hybrid applications as well as in hermetic or non-hermetic packages. Monolithic devices are recommended for highest frequency, broadband designs. The beamlead design eliminates the problems associated with wire bo.

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www.DataSheet.co.kr GC9901 – GC9944 TM ® Schottky Barrier Diodes For Mixers and Detectors RoHS Compliant DESCRIPTION Schottky Barrier devices are currently available in single beamlead, dual “T”, ring quad and bridge quad configurations. Devices are available in monolithic form for hybrid applications as well as in hermetic or non-hermetic packages. Monolithic devices are recommended for highest frequency, broadband designs. The beamlead design eliminates the problems associated with wire bonding very small junction devices thus improving reliability and performance in MIC applications. Our in house epitaxy process capability insures repeatability for lowest conversion loss through Ku Band. A broad range of unique metallization schemes produce Microsemi’s complete line of barrier heights. Diodes are currently available with barrier heights as low as 240 mV and up to 625 mV per junction. By optimizing epitaxy and metallization, these devices achieve the lowest RS-CJ products resulting in exceptional conversion loss performance. “High Rel” screening is available on packaged devices per your requirements. This series of devices meets RoHS requirements per EU Directive 2002/95/EC. KEY FEATURES  Monolithic design for lowest parasitics  Low Conversion Loss  Suitable for applications to 26.5 GHz  Excellent Noise Figure  Available in low, medium and high barrier heights  Can be supplied as monolithic devices for hybrid applications or as packaged devices  RoHS Compliant 1 www.MICROSEMI.com APPLICATIONS Schottky barrier diodes are suitable for a variety of circuit applications ranging from single ended RF mixers to low level high speed switching. The monolithic beamlead design minimizes parasitic inductance and capacitance insuring repeatable performance through Ku band. Single junction devices such as the style ‘S12’ are well suited for RF Mixers, level detectors, phase detectors, modulators, etc. With junction capacitances as low as .06 pF, Monolithic Quads are ideally suited for broadband double balanced mixer designs through 26.5 GHz. The Ultra-Low Barrier devices (GC9900 Series) are designed for mixers with low or starved Local Oscillator levels where optimal conversion loss is a must. High barrier diodes, (GC9940 Series) are designed for applications where high drive levels are available, such as, Doppler mixers or motion detection. Schottky diodes are available in UltraLow, Medium and High Drive levels to fit virtually any circuit requirement. These devices are supplied with Gold plated terminations. Consult factory for details. 1 APPLICATIONS/BENEFITS  Mixers  Level Detectors  Phase Detectors ABSOLUTE MAXIMUM RATINGS AT 25º C (UNLESS OTHERWISE SPECIFIED) 3B Rating Maximum Power Handling Storage Temperature Operating Temperature Symbol P TSTG TOP Value 100 -65 to +175 -55 to +150 Unit mW GC9901-GG9944 ºC ºC IMPORTANT: For the most current data, consult our web site: www.microsemi.com HU U Specifications are subject to change. Consult factory for latest information. These devices are ESD sensitive and must be handled use using ESD precautions. Copyright  2006 Rev: 2009-01-19 Microsemi Microwave Products Page 1 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr GC9901 – GC9944 TM ® Schottky Barrier Diodes For Mixers and Detectors RoHS Compliant . Model Number GC9901 GC9902 GC9903 GC9904 GC9911 GC9912 GC9913 GC9914 GC9921 GC9922 GC9923 GC9924 GC9931 GC9932 GC9933 GC9934 GC9941 GC9942 GC9943 GC9944 1 CHIP ELECTRICAL PARAMETERS @ 25C (unless otherwise specified) Barrier Height Freq Range Ku-Ka ULTRA LOW X C S Ku-Ka LOW X C S Ku-Ka LOWMED X C S Ku-Ka MEDIUM X C S Ku-Ka HIGH X C S 4.0 3.0 2.0 2.0 2.0 VB(V) 2 IR=10μA CJ(pF)3 @0V VF(mV) @1 mA @5 mA RD(Ω) (Max) 20 16 14 12 20 16 14 12 20 16 14 12 20 16 14 12 20 16 14 12 NFSSB 4 (db) ZIF(Ω)5 (Typ) www.MICROSEMI.com (Min) (Max) 0.10 0.15 0.30 0.50 0.10 0.15 0.30 0.50 0.10 0.15 0.30 0.50 0.10 0.15 0.30 0.50 0.10 0.15 0.30 0.50 (Max) 340 310 300 280 360 350 340 330 470 460 440 420 550 540 530 510 660 640 630 610 (Typ) 6.5 6 5.5 5.5 6.5 6 5.5 5.5 6.5 6 5.5 5.5 6.75 6.25 5.75 5.5 7 6.25 5.75 5.75 140 170 200 250 300 Notes 1. When ordering, specify appropriate package style. IE: Order GC9901-S12 for single beamlead configuration. 2. V b measured at 10µA (N/A on ring quads). 3. 0 Volts, F=1 MHz (diagonal leads on quads). 4. L.O. = 0 dBm, Nif = 1.5 dB, F = 10 GHz 5. L.O. = 0 dBm ELECTRICALS Copyright  2006 Rev: 2009-01-19 Microsemi Microwave Products Page 2 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr GC9901 – GC9944 TM ® Schottky Barrier Diodes For Mixers and Detectors RoHS Compliant VF CURVES Typical I-V Curves 100 1 2 3 4 10 TYPICAL NF CURVES www.MICROSEMI.com IF(mA) 1 0.1 1-GC9902 2-GC9922 3-GC9932 4-GC9942 0.01 0 0.2 0.4 0.6 0.


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