FM24CL16B

www.DataSheet.co.kr Preliminary FM24CL16B 16Kb Serial 3V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM Organized as 2,048 x 8 bits High Endurance 1014 Read/Writes 38 year Data Retention NoDelay™ Writes Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface Up to 1MHz Maximum Bus Frequency Direct Hardware Replacement for EEPROM Supports legacy timing for 100 kHz & 400 kHz Low Power Operation 2.7 - 3.65V Operation 100 µA Active Current (100 kHz) 3 µA (typ.) Standby Current Industry Standard Configuration Industrial Temperature -40° C to +85° C 8-pin “Green”/RoHS SOIC and TDFN Packages Description The FM24CL16B is a 16-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 38 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. The FM24CL16B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array in the cycle after it has been successfully transferred to the device. The next bus cycle may commence immediately without the need for data polling. The FM24CL16B is capable of supporting 1014 read/write cycles, or a million times more write cycles than EEPROM. These capabilities make the FM24CL16B ideal for nonvolatile memory app...