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FM24V01 Dataheets PDF



Part Number FM24V01
Manufacturers Ramtron
Logo Ramtron
Description 3V F-RAM Memory
Datasheet FM24V01 DatasheetFM24V01 Datasheet (PDF)

www.DataSheet.co.kr Preliminary FM24V01 128Kb Serial 3V F-RAM Memory Features 128K bit Ferroelectric Nonvolatile RAM  Organized as 16,384 x 8 bits  High Endurance 100 Trillion (1014) Read/Writes  10 year Data Retention  NoDelay™ Writes  Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface  Up to 3.4 MHz maximum bus frequency  Direct hardware replacement for EEPROM  Supports legacy timing for 100 kHz & 400 kHz Device ID  Device ID reads out Manufacturer ID & P.

  FM24V01   FM24V01



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www.DataSheet.co.kr Preliminary FM24V01 128Kb Serial 3V F-RAM Memory Features 128K bit Ferroelectric Nonvolatile RAM  Organized as 16,384 x 8 bits  High Endurance 100 Trillion (1014) Read/Writes  10 year Data Retention  NoDelay™ Writes  Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface  Up to 3.4 MHz maximum bus frequency  Direct hardware replacement for EEPROM  Supports legacy timing for 100 kHz & 400 kHz Device ID  Device ID reads out Manufacturer ID & Part ID Low Voltage, Low Power Operation  Low Voltage Operation 2.0V – 3.6V  Active Current 90 A (typ. @ 100KHz)  Standby Current 80 A (typ.)  Sleep Mode Current 4 A (typ.) Industry Standard Configuration  Industrial Temperature -40 C to +85 C  8-pin “Green”/RoHS SOIC Package Description The FM24V01 is a 128Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. The FM24V01 performs write operations at bus speed. No write delays are incurred. The next bus cycle may commence immediately without the need for data polling. In addition, the product offers write endurance orders of magnitude higher than EEPROM. Also, F-RAM exhibits much lower power during writes than EEPROM since write operations do not require an internally elevated power supply voltage for write circuits. These capabilities make the FM24V01 ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data collection where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with less overhead for the system. The FM24V01 provides substantial benefits to users of serial EEPROM, yet these benefits are available in a hardware drop-in replacement. The device is available in an industry standard 8-pin SOIC package using a familiar two-wire (I2C) protocol. The device incorporates a read-only Device ID that allows the host to determine the manufacturer, product density, and product revision. The device is guaranteed over an industrial temperature range of -40°C to +85°C. Pin Configuration A0 A1 A2 VSS 1 2 3 4 8 7 6 5 VDD WP SCL SDA Pin Name A0-A2 SDA SCL WP VDD VSS Function Device Select Address Serial Data/address Serial Clock Write Protect Supply Voltage Ground This is a product that has fixed target specifications but are subject to change pending characterization results. Rev. 1.1 Sept. 2011 Ramtron International Corporation 1850 Ramtron Drive, Colorado Springs, CO 80921 (800) 545-FRAM, (719) 481-7000 http://www.ramtron.com Page 1 of 14 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr FM24V01 - 128Kb I2C FRAM Counter Address Latch 2K x 64 FRAM Array 8 SDA Serial to Parallel Converter Data Latch 8 Control Logic Device ID and Serial Number SCL WP A0-A2 Figure 1. FM24V01 Block Diagram Pin Description Pin Name A0-A2 Type Input Pin Description Device Select Address 0-2: These pins are used to select one of up to 8 devices of the same type on the same two-wire bus. To select the device, the address value on the two pins must match the corresponding bits contained in the slave address. The address pins are pulled down internally. Serial Data/Address: This is a bi-directional pin for the two-wire interface. It is open-drain and is intended to be wire-OR’d with other devices on the two-wire bus. The input buffer incorporates a Schmitt trigger for noise immunity and the output driver includes slope control for falling edges. An external pull-up resistor is required. Serial Clock: The serial clock pin for the two-wire interface. Data is clocked out of the part on the falling edge, and into the device on the rising edge. The SCL input also incorporates a Schmitt trigger input for noise immunity. Write Protect: When tied to VDD, addresses in the entire memory map will be writeprotected. When WP is connected to ground, all addresses may be written. This pin is pulled down internally. Supply Voltage Ground SDA I/O SCL Input WP Input VDD VSS Supply Supply Rev. 1.1 Sept. 2011 Page 2 of 14 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr FM24V01 - 128Kb I2C FRAM Overview The FM24V01 is a serial F-RAM memory device. The memory array is logically organized as a 16,384 x 8 bit memory array and is accessed using an industry standard two-wire (I2C) interface. Functional operation of the F-RAM is similar to serial EEPROM. The major difference between the FM24V01 and serial EEPROM is F-RAM’s superior write performance. Two-wire Interface The FM24V01 employs a bi-directional two-wire bus protocol using few pins or board space. Figure 2 illust.


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