FM24W256

www.DataSheet.co.kr Preliminary FM24W256 256Kb Wide Voltage Serial F-RAM Features 256K bit Ferroelectric Nonvolatile RAM  Organized as 32,768 x 8 bits  High Endurance 100 Trillion (1014) Read/Writes  38 year Data Retention (@ +75ºC)  NoDelay™ Writes  Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface  Up to 1 MHz maximum bus frequency  Direct hardware replacement for EEPROM  Supports legacy timing for 100 kHz & 400 kHz Low Power Operation  Wide Voltage Operation 2.7V-5.5V  100 A Active Current (100 kHz)  15 A Standby Current (typ.) Industry Standard Configuration  Industrial Temperature -40 C to +85 C  8-pin “Green”/RoHS SOIC Packages Description The FM24W256 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. The FM24W256 performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after it has been successfully transferred to the device. The next bus cycle may commence immediately without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. The FM24W256 is capable of supporting 1014 read/...