FM25040B

www.DataSheet.co.kr Preliminary FM25040B 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits High Endurance 1 Trillion (1012) Read/Writes 38 year Data Retention NoDelay™ Writes Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI Up to 20 MHz maximum Bus Frequency Direct hardware replacement for EEPROM SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1) Sophisticated Write Protection Scheme Hardware Protection Software Protection Low Power Consumption 250 µA Active Current (1 MHz) 4 µA (typ.) Standby Current Industry Standard Configuration Industrial Temperature -40° C to +85° C 8-pin “Green”/RoHS SOIC (-G) Description The FM25040B is a 4-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile but operates in other respects as a RAM. It provides reliable data retention for 38 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. The FM25040B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after it has been successfully transferred to the device. The next bus cycle may commence immediately without the need for data polling. The FM25040B is capable of supporting up to 1012 read/write cycles, or a million times more write cycles than EEPROM. These ca...