FM25V01

www.DataSheet.co.kr Preliminary FM25V01 128Kb Serial 3V F-RAM Memory Features 128K bit Ferroelectric Nonvolatile RAM  Organized as 16,384 x 8 bits  High Endurance 100 Trillion (1014) Read/Writes  10 Year Data Retention  NoDelay™ Writes  Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI  Up to 40 MHz Frequency  Direct Hardware Replacement for Serial Flash  SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1) Write Protection Scheme  Hardware Protection  Software Protection Device ID  Device ID reads out Manufacturer ID & Part ID Low Voltage, Low Power  Low Voltage Operation 2.0V – 3.6V  Active Current 120 A (typ. @ 1MHz)  Standby Current 90 A (typ.)  Sleep Mode Current 5 A (typ.) Industry Standard Configurations  Industrial Temperature -40C to +85C  8-pin “Green”/RoHS SOIC Package Description The FM25V01 is a 128-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by Serial Flash and other nonvolatile memories. Unlike Serial Flash, the FM25V01 performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after it has been transferred to the device. The next bus cycle may commence without the need for data polling...