WM72016

www.DataSheet.co.kr Preliminary WM72016 16Kbit Secure F-RAM Memory with Gen-2 RFID Access & Serial Port Direct Memory Access DESCRIPTION The WM72016 is a RFID transponder IC with nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory, or F-RAM, is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 20 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. Unlike EEPROM‟s, the WM72016 write operations are zero power – there is no power or speed premium paid for executing writes into the WM72016 as compared to read power and speed. Operation of the memory is fully symmetric: it has an equivalent read and write range. The WM72016‟s RFID interface is compatible with the EPC Class-1 Generation-2 UHF RFID Protocol for Communications at 860 MHz – 960 MHz, Version 1.2.0 Specification for RFID Air Interface. The WM72016 is a two chip configuration offered in various forms: standard IC package or wafers. All specifications discussed herein are applicable to the combined chipset operation. FEATURES 16 Kbit Ferroelectric Nonvolatile RAM  Organized as 1024 x 16 bits  Very High Read/Write Endurance (> 1014)  20-Year Data Retention  Gamma Stability Demonstrated to > 30 kGy  Symmetric Read/Write Operation  Advanced High-Reliability Ferroelectric Process Interface and Security Features  EPC Class 1 Gen2 (ISO18000...