50C02SS

www.DataSheet.co.kr Ordering number : ENN7519 50C02SS NPN Epitaxial Planar Silicon Transistor 50C02SS Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions unit : mm 2159A [50C02SS] Low-frequency Amplifer, high-speed switching, small motor drive, muting circuit. Features 0.3 Large current capacitance. Low collector-to-emitter saturation voltage (resistance). RCE(sat) typ=175mΩ [IC=0.5A, IB=50mA]. Ultrasmall package facilitates miniaturization in end products. Small ON-resistance (Ron). Top View 1.4 0.3 Side View 0.1 0.25 3 0.8 1 0.45 0.2 2 Bottom View 0.07 0.07 1.4 Side View 0.6 3 1 : Base 2 : Emitter 3 : Collector SANYO : SSFP 2 1 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Mounted on a glass-epoxy board (20!30!1.6mm) Conditions Ratings 60 50 5 400 800 200 150 --55 to +150 Unit V V V mA mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO hFE fT VCB=40V, IE=0 VEB=4V, IC=0 VCE=2V, IC=10mA VCE=10V, IC=50mA 300 500 Conditions Ratings min typ max 100 100 800 MHz Unit nA nA Marking : YN Continued on next page. Any and all SANYO products described or contained herein...