50C02CH

www.DataSheet.co.kr Ordering number : ENN7515 50C02CH NPN Epitaxial Planar Silicon Transistor 50C02CH Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions unit : mm 2150A [50C02CH] Low-frequency Amplifer, high-speed switching, small motor drive, muting circuit. Features 1 1.9 2 0.6 Large current capacitance. Low collector-to-emitter saturation voltage (resistance). RCE(sat) typ=175mΩ [IC=0.5A, IB=50mA]. Ultrasmall package facilitates miniaturization in end products. Small ON-resistance (Ron). 0.4 3 0.6 0.05 1.6 2.8 0.7 0.9 1 : Base 2 : Emitter 3 : Collector SANYO : CPH3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Mounted on a ceramic board (600mm2!0.8mm) Conditions Ratings 60 50 5 500 1.0 700 150 --55 to +150 Unit V V V mA A mW °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO hFE fT VCB=40V, IE=0 VEB=4V, IC=0 VCE=2V, IC=10mA VCE=10V, IC=50mA 300 500 Conditions Ratings min typ max 100 100 800 MHz Unit nA nA Marking : CX 0.2 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that re...