2SC1359

Transistors 2SC1359 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA0838 5.0±0.2 Unit: mm 4.0±0.2 5.1±0.2 ■ Features Optimum for RF amplification of FM/AM radios High transition frequency fT 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C 0.7±0.2 12.9±0.5 / Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 30 V c type Collector-emitter voltage (Base open) VCEO 20 V n d ge. ed Emitter-base voltage (Collector open) VEBO 5 2.3±0.2 V le sta ntinu Collector current IC 30 mA a e cyc isco Collector power dissipation PC 400 mW life d, d Junction temperature Tj 150 °C n u duct type Storage temperature Tstg −55 to +150 °C 0.45+–00..115 2.5+–00..26 2.5+–00..26 0.45+–00..115 1 23 1: Emitter 2: Collector 3: Base TO-92-B1 Package inte ntines follopwlianngefdoudrisPcroontinued ■ Electrical Characteristics Ta = 25°C ± 3°C a o clud pe, Parameter Symbol Conditions Min Typ Max Unit c ed in ce ty Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0 0.1 µA tinu nan Forward current transfer ratio * hFE VCB = 10 V, IE = −1 mA 70 220  M is iscon ainte Transition frequency fT VCB = 10 V, IE = −1 mA, f = 200 MHz 150 250 MHz e/D e, m Noise figure NF VCB = 10 V, IE = −1 mA, f = 5 MHz 2.8 4.0 dB D anc typ Reverse transfer impedance Zrb VCB = 10 V, IE = −1 mA, f = 2 MHz 22 50 Ω inten nce Reverse transfer capacitance Ma tena (Common emitter) Cre VCB = 10 V,...