Silicon MOSFET. CPH3360 Datasheet

CPH3360 MOSFET. Datasheet pdf. Equivalent


Part CPH3360
Description P-Channel Silicon MOSFET
Feature www.DataSheet.co.kr Ordering number : ENA0114 CPH3360 SANYO Semiconductors DATA SHEET CPH3360 F.
Manufacture Sanyo Semicon Device
Datasheet
Download CPH3360 Datasheet


www.DataSheet.co.kr Ordering number : ENA0114 CPH3360 SAN CPH3360 Datasheet
CPH3360 Power MOSFET –30V, 303mΩ, –1.6A, Single P-Channel CPH3360 Datasheet
Recommendation Recommendation Datasheet CPH3360 Datasheet




CPH3360
www.DataSheet.co.kr
Ordering number : ENA0114
CPH3360
SANYO Semiconductors
DATA SHEET
CPH3360
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
ON-resistance RDS(on)1=233mΩ(typ.)
4V drive
Halogen free compliance
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10μs, duty cycle1%
When mounted on ceramic substrate (900mm2×0.8mm)
Ratings
--30
±20
--1.6
--6.4
0.9
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Package Dimensions
unit : mm (typ)
7015A-004
2.9
3
0.15
Product & Package Information
• Package
: CPH3
• JEITA, JEDEC
: SC-59, TO-236, SOT-23
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Marking
0.05
1
0.95
2
0.4
1 : Gate
2 : Source
3 : Drain
SANYO : CPH3
TL
Electrical Connection
3
1
2
http://semicon.sanyo.com/en/network
N0211PE TKIM TC-00002659 No. A0114-1/4
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CPH3360
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Electrical Characteristics at Ta=25°C
CPH3360
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=--1mA, VGS=0V
VDS=--30V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--0.8A
ID=--0.8A, VGS=--10V
ID=--0.4A, VGS=--4.5V
ID=--0.4A, VGS=--4V
VDS=--10V, f=1MHz
See specied Test Circuit.
VDS=--15V, VGS=--10V, ID=--1.6A
IS=--1.6A, VGS=0V
Switching Time Test Circuit
VIN
0V
--10V
VIN
PW=10μs
D.C.1%
G
VDD= --15V
ID= --0.8A
RL=18.75Ω
D VOUT
CPH3360
P.G 50Ω S
min
--30
Ratings
typ
--1.2
1.3
233
380
441
82
22
16
4.0
3.3
12
5.4
2.2
0.36
0.49
--0.9
max
--1
±10
--2.6
303
532
617
--1.5
Unit
V
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ID -- VDS
--1.6
Ta=25°C
--1.4
--1.2
--1.0 --3.5V
--0.8
--0.6
--0.4 --3.0V
--0.2
0
0
VGS= --2.5V
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
Drain-to-Source Voltage, VDS -- V IT16626
--2.0
VDS= --10V
--1.8
ID -- VGS
--1.6
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
0
--0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0
Gate-to-Source Voltage, VGS -- V IT16627
No. A0114-2/4
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