CPH3360

www.DataSheet.co.kr Ordering number : ENA0114 CPH3360 SANYO Semiconductors DATA SHEET CPH3360 Features P-Channel Silicon MOSFET General-Purpose Switching Device Applications ON-resistance RDS(on)1=233mΩ(typ.) 4V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Conditions Ratings --30 ±20 --1.6 --6.4 0.9 150 --55 to +150 Unit V V A A W °C °C Package Dimensions unit : mm (typ) 7015A-004 Product & Package Information Package : CPH3 JEITA, JEDEC : SC-59, TO-236, SOT-23 Minimum Packing Quantity : 3,000 pcs./reel 2.9 0.6 3 0.15 Packing Type: TL 0.2 Marking WS TL 2.8 1.6 0.05 0.6 1 0.95 2 0.4 1 : Gate 2 : Source 3 : Drain SANYO : CPH3 Electrical Connection 3 0.9 0.2 1 2 http://semicon.sanyo.com/en/network N0211PE TKIM TC-00002659 No. A0114-1/4 Datasheet pdf - http://www.DataSheet4U.net/ LOT No. www.DataSheet.co.kr CPH3360 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Tim...