P-Channel Silicon MOSFET
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Ordering number : ENA1124
CPH3356
SANYO Semiconductors
DATA SHEET
CPH3356
Features
• • •
P-Cha...
Description
www.DataSheet.co.kr
Ordering number : ENA1124
CPH3356
SANYO Semiconductors
DATA SHEET
CPH3356
Features
P-Channel Silicon MOSFET
General-Purpose Switching Device Applications
1.8V drive Halogen free compliance Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Conditions Ratings --20 ±10 --2.5 --10 1.0 150 --55 to +150 Unit V V A A W °C °C
Package Dimensions
unit : mm (typ) 7015A-004
Product & Package Information
Package : CPH3 JEITA, JEDEC : SC-59, TO-236, SOT-23 Minimum Packing Quantity : 3,000 pcs./reel
2.9 0.6 3
0.15
Packing Type: TL
0.2
Marking
WN
TL
2.8
1.6
0.05
0.6
1 0.95
2 0.4
1 : Gate 2 : Source 3 : Drain SANYO : CPH3
Electrical Connection
3
0.9
0.2
1
2
http://semicon.sanyo.com/en/network
N3011PE TKIM TC-00002675 No. A1124-1/4
Datasheet pdf - http://www.DataSheet4U.net/
LOT No.
www.DataSheet.co.kr
CPH3356
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Del...
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