CPH6001A

www.DataSheet.co.kr Ordering number : ENA1079 CPH6001A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor CPH6001A Features High-Frequency Low-Noise Amplifier Applications High gain : ⏐S21e⏐2=11dB typ (f=1GHz). High cutoff frequency : fT=6.7GHz typ. Small and slim 6-pin package. Large allowable collector dissipation (800mW max). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg When mounted on ceramic substrate (250mm2✕0.8mm) Conditions Ratings 20 12 2 100 800 150 --55 to +150 Unit V V V mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO hFE1 hFE2 fT VCB=10V, IE=0A VEB=1V, IC=0A VCE=5V, IC=30mA VCE=5V, IC=70mA VCE=5V, IC=30mA 90 70 5 6.7 GHz Conditions Ratings min typ max 1.0 10 180 Unit μA μA Marking : GA Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpos...