P-Channel Silicon MOSFET
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Ordering number : ENA1529
CPH6350
SANYO Semiconductors
DATA SHEET
CPH6350
Features
• •
P-Chann...
Description
www.DataSheet.co.kr
Ordering number : ENA1529
CPH6350
SANYO Semiconductors
DATA SHEET
CPH6350
Features
P-Channel Silicon MOSFET
General-Purpose Switching Device Applications
4V drive. Low ON-resistance.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Conditions Ratings --30 ±20 -6 --24 1.6 150 --55 to +150 Unit V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Conditions -1mA, VGS=0V ID=-30V, VGS=0V VDS=VGS=±16V, VDS=0V -10V, ID=-1mA VDS=-10V, ID=-3A VDS=-3A, VGS=-10V ID=-1.5A, VGS=-4.5V ID=-1.5A, VGS=-4V ID=--1.2 5.4 33 58 61 43 82 86 Ratings min --30 -1 ±10 --2.6 typ max Unit V μA μA V S mΩ mΩ mΩ
Marking : XC
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Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentio...
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