CPH6355

www.DataSheet.co.kr Ordering number : EN8933 CPH6355 SANYO Semiconductors DATA SHEET CPH6355 Features P-Channel Silicon MOSFET General-Purpose Switching Device Applications ON-resistance RDS(on)1=130mΩ(typ.) 4V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1500mm2×0.8mm) Conditions Ratings --30 ±20 -3 --12 1.6 150 --55 to +150 Unit V V A A W °C °C Package Dimensions unit : mm (typ) 7018A-003 2.9 0.6 6 5 4 0.2 0.15 Product & Package Information Package : CPH6 JEITA, JEDEC : SC-74, SOT-26, SOT-457 Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TL 0.05 Marking LOT No. 2.8 1.6 0.6 1 2 0.95 3 0.4 TL 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : CPH6 0.2 Electrical Connection 1, 2, 5, 6 0.9 3 4 http://semicon.sanyo.com/en/network 81011PE TKIM TC-00002635 No.8933-1/4 Datasheet pdf - http://www.DataSheet4U.net/ XF www.DataSheet.co.kr CPH6355 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer C...