EC3A03B

www.DataSheet.co.kr Ordering number : ENN7295A EC3A03B N-Channel Silicon Junction FET EC3A03B Impedance Converter, Infrared Sensor Applications Preliminary Features Package Dimensions unit : mm 2208 [EC3A03B] 0.35 0.2 0.15 0.05 1 0.4 Small IGSS. Small Ciss. Ultraminiature package facilitates miniaturization in end products. 0.15 0.25 2 0.05 1.0 0.65 3 0.5 (Bottom View) 0.25 0.05 0.05 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSS VGDS IG ID PD Tj Tstg Conditions 1 : Source 2 : Drain 3 : Gate SANYO : ECSP1006-3 Ratings 40 --40 10 1 100 150 --55 to +150 Unit V V mA mA mW °C °C 0.6 Electrical Characteristics at Ta=25°C Parameter Gate-to-Drain Breakdown Voltage Gate-to-Source Leakage Current Cutoff Voltage Zero-Gate Voltage Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Symbol V(BR)GDS IGSS VGS(off) IDSS yfs Ciss Crss Conditions IG=-10µA, VDS=0 VGS=--20V, VDS=0 VDS=10V, ID=1µA VDS=10V, VGS=0 VDS=10V, VGS=0, f=1kHz VDS=10V, VGS=0, f=1MHz VDS=10V, VGS=0, f=1MHz 50 0.05 0.13 1.7 0.7 Ratings min --40 --500 --1.5 --4.0 130 typ max Unit V pA V µA mS pF pF Marking : JV Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support sys...