EC4402C

www.DataSheet.co.kr Ordering number : EN7037A EC4402C SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EC4402C Features Small Signal Switch and Interface Applications Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions Ratings 50 ±10 0.1 0.4 0.15 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=1mA, VGS=0V VDS=50V, VGS=0V VGS=± 8V, VDS=0V VDS=10V, ID=100µA VDS=10V, ID=50mA ID=50mA, VGS=4V ID=30mA, VGS=2.5V ID=10mA, VGS=1.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min 50 1 ± 10 0.4 0.13 0.18 6 7.1 10 6.6 4.7 1.7 18 42 190 105 7.8 9.9 20 1.3 typ max Unit V µA µA V S Ω Ω Ω pF pF pF ns ns n...