ECH8420

www.DataSheet.co.kr Ordering number : EN8993 ECH8420 SANYO Semiconductors DATA SHEET ECH8420 Features N-Channel Silicon MOSFET General-Purpose Switching Device Applications ON-resistance RDS(on)1=5.2mΩ (typ.) 1.8V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Conditions Ratings 20 ±12 14 50 1.6 150 --55 to +150 Unit V V A A W °C °C Package Dimensions unit : mm (typ) 7011A-002 Top View 0.25 2.9 0.15 8 5 0 t o 0.02 2.8 2.3 Product & Package Information Package : ECH8 JEITA, JEDEC : Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking ZA Lot No. TL 0.25 1 0.65 4 0.3 Electrical Connection 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain 8 7 6 5 0.07 0.9 Bot t om View SANYO : ECH8 1 2 3 4 http://semicon.sanyo.com/en/network O1911PE TKIM TC-00002660 No.8993-1/4 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr ECH8420 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitan...