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Ordering number : ENA1010
ECH8651R
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
ECH8651R
Features
• • • • • •
General-Purpose Switching Device Applications
Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2✕0.8mm) 1unit When mounted on ceramic substrate (900mm2✕0.8mm) Conditions Ratings 24 ±12 10 60 1.4 1.5 150 --55 to +150 Unit V V A A W W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) ⏐yfs⏐ Conditions ID=1mA, VGS=0V VDS=20V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=5A 0.5 5.5 9.5 Ratings min 24 1 ±10 1.3 typ max Unit V μA μA V S
Marking : WV
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
40908PE TI IM TC-00001313 No. A1010-1/4
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ECH8651R
Continued from preceding page.
Parameter Symbol RDS(on)1 RDS(on)2 RDS(on)3 RDS(on)4 td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=5A, VGS=4.5V ID=5A, VGS=4.0V ID=5A, VGS=3.1V ID=2.5A, VGS=2.5V See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=10V, ID=10A VDS=10V, VGS=10V, ID=10A VDS=10V, VGS=10V, ID=10A IS=10A, VGS=0V Ratings min 7 7.2 7.5 9 typ 10.5 11 12.5 15 300 1000 4000 2500 24 2 4.5 0.77 1.2 max 14 15 17.5 21 Unit mΩ mΩ mΩ mΩ ns ns ns ns nC nC nC V
Static Drain-to-Source On-State Resistance
Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage
Package Dimensions
unit : mm (typ) 7011A-003
Top View
0.25
Electrical Connection
8 7 6 5
2.9 0.15
8
5
0 to 0.02
2.8
2.3
1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain
Top view
1
2
3
4
0.25
1
0.65
4
0.3
0.9
1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain
Bottom View
0.07
SANYO : ECH8
Switching Time Test Circuit
VIN 4.5V 0V VIN ID=5A RL=2Ω VDD=10V
D
PW=10μs D.C.≤1% Rg
VOUT
G
P.G
ECH8651R 50Ω
S
Rg=1kΩ
No. A1010-2/4
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ECH8651R
10
ID -- VDS
3.1V
40
RDS(on) -- VGS
Ta=25°C
Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ
9
2.5
V
4V
8
1.5V
35 30 25 20 15 10 5 0
Drain Current, ID -- A
7 6 5 4 3 2 1 0 0 0.1 0.2 0.3
4.5V
ID=2.5A
5.0A
VGS=1V
0.4 0.5 IT13148
0
2
4
6
8
10 IT13149
Drain-to-Source Voltage, VDS -- V
30
Gate-to-Source Voltage, VGS -- V
10
RDS(on) -- Ta
⏐yfs⏐ -- ID
Forward Transfer Admittance, ⏐yfs⏐ -- S
VDS=10V
7
Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ
25
20
15
10
2.5A I D= , V =2.