P-Channel Silicon MOSFET
www.DataSheet.co.kr
Ordering number : ENA0935
ECH8652
SANYO Semiconductors
DATA SHEET
P-Channel Silicon MOSFET
ECH8...
Description
www.DataSheet.co.kr
Ordering number : ENA0935
ECH8652
SANYO Semiconductors
DATA SHEET
P-Channel Silicon MOSFET
ECH8652
Features
General-Purpose Switching Device Applications
Low ON-resistance. 1.8V drive. Composite type, facilitating high-density mounting. Halogen free compliance.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2✕0.8mm) 1unit When mounted on ceramic substrate (900mm2✕0.8mm) Conditions Ratings --12 ±10 --6 --40 1.3 1.5 150 --55 to +150 Unit V V A A W W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS1 IDSS2 IGSS VGS(off) ⏐yfs⏐ Conditions ID=-1mA, VGS=0V VDS=-8V, VGS=0V VDS=-12V, VGS=0V VGS=±8V, VDS=0V VDS=-6V, ID=-1mA VDS=-6V, ID=-3A --0.4 6.6 11 Ratings min --12 --1 --10 ±10 --1.4 typ max Unit V
μA μA μA
V S
Marking : WX
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Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipme...
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