N-Channel Silicon MOSFET
www.DataSheet.co.kr
Ordering number : ENA0851
ECH8653
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
ECH8...
Description
www.DataSheet.co.kr
Ordering number : ENA0851
ECH8653
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
ECH8653
Features
General-Purpose Switching Device Applications
Low ON-resistance. 4V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm) 1unit Mounted on a ceramic board (900mm2✕0.8mm) Conditions Ratings 20 ±10 7.5 40 1.4 1.5 150 --55 to +150 Unit V V A A W W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs Conditions ID=1mA, VGS=0V VDS=20V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=4A Ratings min 20 1 ±10 1.0 3.4 5.8 2.4 typ max Unit V µA µA V S
Marking : WY
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Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products me...
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