EFC4618R

www.DataSheet.co.kr Ordering number : ENA1881 EFC4618R SANYO Semiconductors DATA SHEET EFC4618R Features N-Channel Silicon MOSFET General-Purpose Switching Device Applications 2.5V drive Best suited for LiB charging and discharging switch Common-drain type Specifications Absolute Maximum Ratings at Ta=25°C Parameter Source-to-Source Voltage Gate-to-Source Voltage Source Current (DC) Source Current (Pulse) Total Dissipation Channel Temperature Storage Temperature Symbol VSSS VGSS IS ISP PT Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (5000mm2×0.8mm) Conditions Ratings 24 ±12 6 60 1.6 150 --55 to +150 Unit V V A A W °C °C Package Dimensions unit : mm (typ) 7069-001 1.81 4 3 Product & Package Information Package : EFCP JEITA, JEDEC : Minimum Packing Quantity : 5,000 pcs./reel Packing Type : TR Marking 1.81 TR FT LOT No. 0.22 1 2 Electrical Connection 0.15 0.37 0.65 1 0.65 4 2 3 1 1 : Source1 2 : Gate1 3 : Gate2 4 : Source2 Rg 2 0.3 SANYO : EFCP1818-4CC-037 Rg 3 Rg=200Ω 4 http://semicon.sanyo.com/en/network 33011PF TKIM TC-00002594 No. A1881-1/5 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr EFC4618R Electrical Characteristics at Ta=25°C Parameter Source-to-Source Breakdown Voltage Zero-Gate Voltage Source Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)SSS ISSS IGSS VGS(off) | yfs | RSS(on)1 RSS(on)2 Static Source-to-Source On-State Resistance RSS(on)3 RSS...