Document
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Ordering number : EN8937
FSS294
SANYO Semiconductors
DATA SHEET
FSS294
Features
• • • • •
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
ON-resistance RDS(on)1=7.8mΩ(typ.) Input capacitance Ciss=2650pF(typ.) 4V drive Protection diode in Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Duty cycle≤1% When mounted on ceramic substrate (1200mm2×0.8mm), PW≤10s Conditions Ratings 40 ±20 13 52 3.0 150 --55 to +150 Unit V V A A W °C °C
Package Dimensions
unit : mm (typ) 7005A-002
5.0 0.8 8 5 0.2
Product & Package Information
• Package : SOP8 • JEITA, JEDEC : SC-87, SOT-96 • Minimum Packing Quantity : 1,000 pcs./reel
Packing Type : TL
Marking
0.1 6.0 4.4
0.3
S294
1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : SOP8
4
TL
LOT No.
0.8
1 1.27
4 0.43
Electrical Connection
5, 6, 7, 8
1.8 MAX
1.5
0.7
1, 2, 3
http://semicon.sanyo.com/en/network
82411PA TKIM TC-00002631 No.8937-1/4
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FSS294
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD IS=13A, VGS=0V VDS=20V, VGS=10V, ID=13A VDS=20V, f=1MHz Conditions ID=1mA, VGS=0V VDS=40V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=13A ID=13A, VGS=10V ID=6.5A, VGS=4.5V ID=6.5A, VGS=4V Ratings min 40 1 ±10 1.5 11 7.8 12 15.5 2650 320 235 27 See specified Test Circuit. 180 154 118 52 9.6 10.5 0.81 1.2 10.2 17 22 2.6 typ max Unit V μA μA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V
Switching Time Test Circuit
10V 0V VIN VDD=20V ID=13A RL=1.54Ω D VOUT
VIN PW=10μs D.C.≤1% G
FSS294 P.G 50Ω S
13 12
ID -- VDS
°
20 18 16
ID -- VGS
10
Drain Current, ID -- A
Drain Current, ID -- A
14 12 10 8 6 4
8
6
2 2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0 0.5 1.0 1.5 2.0
°
°
2.5 3.0
4
°
3.5
4.0
Drain-to-Source Voltage, VDS -- V
Gate-to-Source Voltage, VGS -- V No.8937-2/4
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FSS294
30
RDS(on) -- VGS
Ta=25°C
Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID=6.5A 13A
30
RDS(on) -- Ta
Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ
25
25
20
20
15
15
10
10
6.5A , I D= 4.0V = VGS 6.5A , I D= 4.5V = VGS 13.0A , I D= V 0 . 0 =1 VGS
5
5
0 0 2 4 6 8 10 12 14 16
0 --60
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3
| yfs | -- ID
IT16566 100 7 5 3 2
Ambient Temperature, Ta -- °C
IS -- VSD
IT16567
Forward Transfer Admittance, | yfs | -- S
VDS=10V
VGS=0V
0.1 7 5 3 2
Drain Current, ID -- A
1000 7 5
SW Time -- ID
5 7 100 IT16568
0.01 7 5 3 2 0.001
0
0.2
0.4
Ta= 75
°C 25° C --25° C
0.6 0.8
Ta=
°C --25 C 75°
Source Current, IS -- A
25°C
10 7 5 3 2 1.0 7 5 3 2
1.0
1.2 IT16569
VDD=20V VGS=10V
td(off)
tf
10000 7 5 3 2 1000 7 5 3 2 100 7 5 3 2
Ciss, Coss, Crss -- VDS
Ciss
Diode Forward Voltage, VSD -- V
f=1MHz
Switching Time, SW Time -- ns
100 7 5 3 2 10 7 5 3 2 1.0 0.1 2 3 5 7 1.0
tr
Ciss, Coss, Crss -- pF
3 2
td(on)
Coss
Crss
2
3
5 7 10
2
3
Drain Current, ID -- A
10
VGS -- Qg
5 7 100 IT16570
10
0
10
20
30
40 IT16571
Drain-to-Source Voltage, VDS -- V
1000 7 5 3 2
ASO
Gate-to-Source Voltage, VGS -- V
VDS=20V ID=13A
8
Drain Current, ID -- A
100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2
IDP=52A (PW≤10μs) ID=13A
10
DC
1m
6
0m 10m s s
s
s
10 10 μs 0μ s
10
4
op
era
2
0
0
10
20
30
40
50
60 IT16572
Total Gate Charge, Qg -- nC
0.1 7 5 Ta=25°C 3 Single pulse 2 When mounted on ceramic substrate (1200mm2×0.8mm) 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 Drain-to-Source Voltage, VDS -- V IT16573
Operation in this area is limited by RDS(on).
tio
n
No.8937-3/4
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FSS294
3.5
PD -- Ta
Ta=25°C When mounted on ceramic substrate (1200mm2×0.8mm), PW≤10s
Allowable Power Dissipation, PD -- W
3.0 2.5 2.0 1.5 1.0 0.5 0 0 20 40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT16574
Note on usage : Since the FSS294 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
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