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FSS294 Dataheets PDF



Part Number FSS294
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description N-Channel Silicon MOSFET
Datasheet FSS294 DatasheetFSS294 Datasheet (PDF)

www.DataSheet.co.kr Ordering number : EN8937 FSS294 SANYO Semiconductors DATA SHEET FSS294 Features • • • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications ON-resistance RDS(on)1=7.8mΩ(typ.) Input capacitance Ciss=2650pF(typ.) 4V drive Protection diode in Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel .

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www.DataSheet.co.kr Ordering number : EN8937 FSS294 SANYO Semiconductors DATA SHEET FSS294 Features • • • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications ON-resistance RDS(on)1=7.8mΩ(typ.) Input capacitance Ciss=2650pF(typ.) 4V drive Protection diode in Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Duty cycle≤1% When mounted on ceramic substrate (1200mm2×0.8mm), PW≤10s Conditions Ratings 40 ±20 13 52 3.0 150 --55 to +150 Unit V V A A W °C °C Package Dimensions unit : mm (typ) 7005A-002 5.0 0.8 8 5 0.2 Product & Package Information • Package : SOP8 • JEITA, JEDEC : SC-87, SOT-96 • Minimum Packing Quantity : 1,000 pcs./reel Packing Type : TL Marking 0.1 6.0 4.4 0.3 S294 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : SOP8 4 TL LOT No. 0.8 1 1.27 4 0.43 Electrical Connection 5, 6, 7, 8 1.8 MAX 1.5 0.7 1, 2, 3 http://semicon.sanyo.com/en/network 82411PA TKIM TC-00002631 No.8937-1/4 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr FSS294 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD IS=13A, VGS=0V VDS=20V, VGS=10V, ID=13A VDS=20V, f=1MHz Conditions ID=1mA, VGS=0V VDS=40V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=13A ID=13A, VGS=10V ID=6.5A, VGS=4.5V ID=6.5A, VGS=4V Ratings min 40 1 ±10 1.5 11 7.8 12 15.5 2650 320 235 27 See specified Test Circuit. 180 154 118 52 9.6 10.5 0.81 1.2 10.2 17 22 2.6 typ max Unit V μA μA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit 10V 0V VIN VDD=20V ID=13A RL=1.54Ω D VOUT VIN PW=10μs D.C.≤1% G FSS294 P.G 50Ω S 13 12 ID -- VDS ° 20 18 16 ID -- VGS 10 Drain Current, ID -- A Drain Current, ID -- A 14 12 10 8 6 4 8 6 2 2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0 0.5 1.0 1.5 2.0 ° ° 2.5 3.0 4 ° 3.5 4.0 Drain-to-Source Voltage, VDS -- V Gate-to-Source Voltage, VGS -- V No.8937-2/4 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr FSS294 30 RDS(on) -- VGS Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID=6.5A 13A 30 RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 25 25 20 20 15 15 10 10 6.5A , I D= 4.0V = VGS 6.5A , I D= 4.5V = VGS 13.0A , I D= V 0 . 0 =1 VGS 5 5 0 0 2 4 6 8 10 12 14 16 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 | yfs | -- ID IT16566 100 7 5 3 2 Ambient Temperature, Ta -- °C IS -- VSD IT16567 Forward Transfer Admittance, | yfs | -- S VDS=10V VGS=0V 0.1 7 5 3 2 Drain Current, ID -- A 1000 7 5 SW Time -- ID 5 7 100 IT16568 0.01 7 5 3 2 0.001 0 0.2 0.4 Ta= 75 °C 25° C --25° C 0.6 0.8 Ta= °C --25 C 75° Source Current, IS -- A 25°C 10 7 5 3 2 1.0 7 5 3 2 1.0 1.2 IT16569 VDD=20V VGS=10V td(off) tf 10000 7 5 3 2 1000 7 5 3 2 100 7 5 3 2 Ciss, Coss, Crss -- VDS Ciss Diode Forward Voltage, VSD -- V f=1MHz Switching Time, SW Time -- ns 100 7 5 3 2 10 7 5 3 2 1.0 0.1 2 3 5 7 1.0 tr Ciss, Coss, Crss -- pF 3 2 td(on) Coss Crss 2 3 5 7 10 2 3 Drain Current, ID -- A 10 VGS -- Qg 5 7 100 IT16570 10 0 10 20 30 40 IT16571 Drain-to-Source Voltage, VDS -- V 1000 7 5 3 2 ASO Gate-to-Source Voltage, VGS -- V VDS=20V ID=13A 8 Drain Current, ID -- A 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 IDP=52A (PW≤10μs) ID=13A 10 DC 1m 6 0m 10m s s s s 10 10 μs 0μ s 10 4 op era 2 0 0 10 20 30 40 50 60 IT16572 Total Gate Charge, Qg -- nC 0.1 7 5 Ta=25°C 3 Single pulse 2 When mounted on ceramic substrate (1200mm2×0.8mm) 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 Drain-to-Source Voltage, VDS -- V IT16573 Operation in this area is limited by RDS(on). tio n No.8937-3/4 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr FSS294 3.5 PD -- Ta Ta=25°C When mounted on ceramic substrate (1200mm2×0.8mm), PW≤10s Allowable Power Dissipation, PD -- W 3.0 2.5 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT16574 Note on usage : Since the FSS294 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Lt.


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