FTS2057

www.DataSheet.co.kr Ordering number : EN8989 FTS2057 SANYO Semiconductors DATA SHEET FTS2057 Features N-Channel Silicon MOSFET General-Purpose Switching Device Applications ON-resistance RDS(on)1=96mΩ(typ.) Input capacitance Ciss=1030pF(typ.) 4V drive Protection diode in Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (2000mm2×0.8mm) Conditions Ratings 100 ±20 3 12 1.3 150 --55 to +150 Unit V V A A W °C °C Package Dimensions unit : mm (typ) 7006A-009 0.95 3.0 8 5 0.5 0.125 Product & Package Information Package : TSSOP8 JEITA, JEDEC : Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking LOT No. 6.4 4.5 TL S2057 1 0.95 4 0.25 0.65 0.05 1.0 1 : Drain 2 : Source 3 : Source 4 : Gate 5 : No Contact 6 : No Contact 7 : No Contact 8 : Drain SANYO : TSSOP8 Electrical Connection 1, 8 0.425 4 2, 3 http://semicon.sanyo.com/en/network 82411PE TKIM TC-00002632 No.8989-1/4 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr FTS2057 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-S...