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BU1006, BU1008, BU1010
Vishay General Semiconductor
Enhanced isoCink+™ Bridge Rectifiers
isoCink+™
+ ~~ -
Case Style BU
- ~~+
+~~ -
PRIMARY CHARACTERISTICS
Package
BU
IF(AV) VRRM IFSM
IR VF at IF = 5.0 A
TJ max. Circuit configuration
10 A 600 V, 800 V, 1000 V
120 A 5 μA 0.88 V 150 °C In-line
FEATURES
• UL recognition file number E312394
• Thin single in-line package
• Glass passivated chip junction
• Available for BU-5S lead forming option (part
number with “5S” suffix, e.g. BU10065S)
Available
• Superior thermal conductivity
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification for switching power supply, home appliances and white-goods applications.
MECHANICAL DATA
Case: BU
Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade
Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 and M3 suffix meet JESD 201 class 1A whisker test
Polarity: as marked on body
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Average rectified forward current (Fig. 1, 2)
Non-repetitive peak forward surge current 8.3 ms single sine-wave, TJ = 25 °C Rating for fusing (t < 8.3 ms) TJ = 25 °C Operating junction and storage temperature range
TC = 92 °C (1) TA = 25 °C (2)
VRRM IO
IFSM I2t TJ, TSTG
Notes
(1) With 60 W air cooled heatsink (2) Without heatsink, free air
BU1006 600
BU1008 800 10 3.2
120
60 -55 to +150
BU1010 1000
UNIT V
A
A A2s °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Maximum instantaneous forward voltage per diode (1)
Maximum reverse current per diode
Typical junction capacitance per diode
IF = 5.0 A
rated VR 4.0 V, 1 MHz
TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C
VF
IR CJ
0.98 0.88
64 43
Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle
MAX. 1.05 0.95 5.0 250
-
UNIT V
μA pF
Revision: 29-Aug-17
1 Document Number: 84801
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
BU1006, BU1008, BU1010
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
BU1006
Typical thermal resistance
RJC (1) RJA (2)
Notes
(1) With 60 W air cooled heatsink (2) Without heatsink, free air
BU1008 3.0 20
BU1010
UNIT °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
BU1006-E3/45
4.5.