BYG24

www.DataSheet.co.kr BYG24 Vishay Semiconductors Fast Avalanche SMD Rectifier Features Glass passivated junction Low reverse current Soft recovery characteristics Fast reverse recovery time Wave and reflow solderable 15811 Applications Freewheeling diodes in SMPS and converters Snubber diodes Parts Table Part BYG 24 D BYG 24 G BYG 24 J Type differentiation VR = 200 V @ IFAV = 1.5 A VR = 400 V @ IFAV = 1.5 A VR = 600 V @ IFAV = 1.5 A DO-214AC DO-214AC DO-214AC Package Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Reverse voltage = Repetitive peak reverse voltage Test condition Part BYG 24 D BYG 24 G BYG 24 J Peak forward surge current Average forward current Junction and storage temperature range Pulse energy in avalanche mode, non repetitive (inductive load switch off) I(BR)R = 1 A, Tj = 25 °C tp = 10 ms, half-sinewave Symbol VR = VRRM VR = VRRM VR = VRRM IFSM IFAV Tj = Tstg ER Value 200 400 600 30 1.5 - 55 to + 150 20 Unit V V V A A °C mJ Maximum Thermal Resistance Tamb = 25 °C, unless otherwise specified Parameter Junction case Junction ambient epoxy glass hard tissue 35 µm * 17 mm2 cooper area per electrode epoxy glass hard tissue 35 &muMm * 50 mm2 cooper area per electrode RthJA 125 K/W Test condition Part Symbol RthJC RthJA Value 25 150 Unit K/W K/W Document Number 86067 Rev. 1.2, 19-Oct-04 www.vishay.com 1 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr BYG24 Vishay Semiconductors Electrical Characterist...