2SC1573A

Transistor 2SC1573, 2SC1573A, 2SC1573B Silicon NPN triple diffusion planer type For high breakdown voltage general amplification For small TV video output Complementary to 2SC1573 and 2SA879 s Features q High collector to emitter voltage VCEO. q High transition frequency fT. s Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit 2SC1573 250 Collector to 2SC1573A VCBO 300 V base voltage 2SC1573B 400 2SC1573 200 Collector to 2SC1573A VCEO 300 V emitter voltage 2SC1573B 400 Emitter to base voltage VEBO 7 V Peak collector current ICP 100 mA Collector current IC 70 mA Collector power dissipation PC 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C s Electrical Characteristics (Ta=25˚C) 5.9±0.2 Unit: mm 4.9±0.2 8.6±0.2 0.7–0.2 +0.3 0.7±0.1 2.54±0.15 13.5±0.5 +0.2 0.45–0.1 1.27 1.27 123 3.2 +0.2 0.45–0.1 1:Emitter 2:Collector 3:Base EIAJ:SC–51 TO–92L Package Parameter Collector cutoff current Collector to emitter voltage 2SC1573 2SC1573A 2SC1573B Symbol ICBO VCEO Conditions VCB = 12V, IE = 0 IC = 100µA, IB = 0 min typ max Unit 2 µA 200 300 V 400 Emitter to base voltage 2SC1573 2SC1573A 2SC1573B Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance 2SC1573 2SC1573A 2SC1573B VEBO hFE* VCE(sat) fT Cob 5 IE = 1µA, IC = 0 7 VCE = 10V, IC = 5mA 30 IC = 50mA, IB = 5mA VCB = 10V, IE = –10mA, f = 200MHz ...