2SC1623

DATA SHEET SILICON TRANSISTOR 2SC1623 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES High DC Current Gain: hFE = 200 TYP. (VCE = 6.0 V, IC = 1.0 mA) High Voltage: VCEO = 50 V ABSOLUTE MAXIMUM RATINGS PACKAGE DIMENSIONS in millimeters 2.8 ± 0.2 0.4 +0.1 –0.05 1.5 0.65 +0.1 –0.15 0.95 Maximum Voltages and Current (TA = 25 ˚C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Maximum Power Dissipation Total Power Dissipation at 25 ˚C Ambient Temperature PT Maximum Temperatures Junction Temperature Storage Temperature Range Tj Tstg 150 ˚C –55 to +150 ˚C 200 mW 1.1 to 1.4 VCBO VCEO VEBO IC 60 50 5.0 100 V V V mA 2.9 ± 0.2 2 3 0.95 Marking 0.3 0.16 +0.1 –0.06 TEST CONDITIONS VCB = 60 V, IE = 0 VEB = 5.0 V, IC = 0 VCE = 6.0 V, IC = 1.0 mA* V V V MHz pF IC = 100 mA, IB = 10 mA* IC = 100 mA, IB = 10 mA* VCE = 6.0 V, IC = 1.0 mA* VCE = 6.0 V, IE = –10 mA VCB = 6.0 V, IE = 0, f = 1.0 MHz 0 to 0.1 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector Saturation Voltage Base to Saturation Voltage Base Emitter Voltage Gain Bandwidth Product Output Capacitance SYMBOL ICBO IEBO hFE VCE(sat) VBE(sat) VBE fT Cob 0.55 90 200 0.15 0.86 0.62 250 3.0 MIN. TYP. MAX. 0.1 0.1 600 0.3 1.0 0.65 1: Emitter 2: Base 3: Collector UNIT µA µA * Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2 % hFE Classification Marking hFE L4 ...