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2SC1627

Toshiba Semiconductor

TRANSISTOR

2SC1627 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1627 Driver Stage Amplifier Applications Voltage...


Toshiba Semiconductor

2SC1627

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2SC1627 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1627 Driver Stage Amplifier Applications Voltage Amplifier Applications · · Complementary to 2SA817 Driver stage application of 20 to 25 watts amplifiers. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 80 80 5 300 60 600 150 -55~125 Unit V V V mA mA mW °C °C JEDEC JEITA TOSHIBA TO-92 SC-43 2-5F1B Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage Symbol ICBO IEBO V (BR) CEO hFE (1) DC current gain (Note) hFE (2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance VCE (sat) VBE fT Cob Test Condition VCB = 50 V, IE = 0 VEB = 5 V, IC = 0 IC = 5 mA, IB = 0 VCE = 2 V, IC = 50 mA VCE = 2 V, IC = 200 mA IC = 200 mA, IB = 10 mA VCE = 2 V, IC = 5 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz Weight: 0.21 g (typ.) Min ¾ ¾ 80 70 40 ¾ 0.55 ¾ ¾ Typ. ¾ ¾ ¾ ¾ ¾ ¾ ¾ 100 10 Max 0.1 0.1 ¾ 240 ¾ 0.5 0.8 ¾ ¾ Unit mA mA V V V MHz pF Note: hFE (1) classification O: 70~140, Y: 120~240 1 2003-03-24 2SC1627 2 2003-03-24 2SC1627 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliabi...




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