2SC1627
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC1627
Driver Stage Amplifier Applications Voltage...
2SC1627
TOSHIBA
Transistor Silicon
NPN Epitaxial Type (PCT process)
2SC1627
Driver Stage Amplifier Applications Voltage Amplifier Applications
· · Complementary to 2SA817 Driver stage application of 20 to 25 watts amplifiers. Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 80 80 5 300 60 600 150 -55~125 Unit V V V mA mA mW °C °C
JEDEC JEITA TOSHIBA
TO-92 SC-43 2-5F1B
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage Symbol ICBO IEBO V (BR) CEO hFE (1) DC current gain (Note) hFE (2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance VCE (sat) VBE fT Cob Test Condition VCB = 50 V, IE = 0 VEB = 5 V, IC = 0 IC = 5 mA, IB = 0 VCE = 2 V, IC = 50 mA VCE = 2 V, IC = 200 mA IC = 200 mA, IB = 10 mA VCE = 2 V, IC = 5 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz
Weight: 0.21 g (typ.)
Min ¾ ¾ 80 70 40 ¾ 0.55 ¾ ¾
Typ. ¾ ¾ ¾ ¾ ¾ ¾ ¾ 100 10
Max 0.1 0.1 ¾ 240 ¾ 0.5 0.8 ¾ ¾
Unit mA mA V
V V MHz pF
Note: hFE (1) classification
O: 70~140, Y: 120~240
1
2003-03-24
2SC1627
2
2003-03-24
2SC1627
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliabi...