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2SD1383K / 2SC1645S
Transistors
High-gain Amplifier Transistor (32V , 0.3A)
2SD1383K / 2SC1645S
zF...
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2SD1383K / 2SC1645S
Transistors
High-gain Amplifier
Transistor (32V , 0.3A)
2SD1383K / 2SC1645S
zFeatures 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD852K / 2SA830S.
zExternal dimensions (Unit : mm)
2SD1383K
2.9 0.4
(3)
1.1 0.8
zCircuit diagram
(2)
(1)
0.95 0.95 0.15 1.9
(1)Emitter
B
(2)Base (3)Collector
Each lead has same dimensions
RBE
4kΩ
2SC1645S
E : Emitter B : Base C : Collector E
3.0
4.0 2.0
(15Min.)
zPackaging specifications
Type Package hFE Marking Code Basic ordering unit (pieces) 2SD1383K SMT3 B W∗ T146 3000 2SC1645S SPT B − TP 5000
3Min.
0.45
2.5 5.0
(1) (2) (3)
0.5
0.45
(1)Emitter (2)Collector (3)Base Taping specifications
∗ Denotes hFE
zAbsolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 40 32 6 0.3 1.5 0.2 150 −55 to +150 Unit V ∗1 V V A (DC) A (Pulse) ∗2 W °C °C
Collector current Collector power dissipation Junction temperature Storage temperature
∗1 RBE=0Ω ∗2 Single pulse Pw=10ms
0.3Min.
C
1.6 2.8
Rev.A
1/3
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2SD1383K / 2SC1645S
Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition freq...