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2SJ377
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (L −π−MOSV)
2
2SJ377
5.2 ± 0.2 1...
www.DataSheet.co.kr
2SJ377
TOSHIBA Field Effect
Transistor Silicon P-Channel MOS Type (L −π−MOSV)
2
2SJ377
5.2 ± 0.2 1.5 ± 0.2
Relay Drive, DC/DC Converter and Motor Drive Applications
z 4 V gate drive z Low drain-source ON-resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.16 Ω (typ.)
1.2 MAX.
Unit: mm
6.5 ± 0.2 0.6 MAX.
: IDSS = −100 μA (max) (VDS = −60 V) : Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
9.5 ± 0.3
: |Yfs| = 4.0 S (typ.)
5.5 ± 0.2
1.1 ± 0.2 0.6 MAX.
0.8 MAX. 2.3 ± 0.2
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating −60 −60 ±20 −5 −20 20 273 −5 2 150 −55 to 150 Unit V V V A A W mJ A mJ °C °C
0.6 ± 0.15 1 2
1.05 MAX. 3
2.3 ± 0.15 2.3 ± 0.15
0.1 ± 0.1
2 1
Pulse (Note 1)
GATE DRAIN （HEAT SINK） 3. SOURSE
1. 2.
3
Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
― ― 2-7J1B
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, ...
