STT4PF20V

www.DataSheet.co.kr P-CHANNEL 20V - 0.090 Ω - 3A SOT23-6L 2.7V-DRIVE STripFET™ II POWER MOSFET TYPE STT4PF20V s s s STT4PF20V VDSS 20 V RDS(on) < 0.11 Ω ( @ 4.5 V ) < 0.135 Ω ( @ 2.7 V ) ID 3A s TYPICAL RDS(on) = 0.090 Ω @ 4.5 V TYPICAL RDS(on) = 0.100 Ω @ 2.7 V ULTRA LOW THRESHOLD GATE DRIVE (2.7 V) STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY SOT23-6L DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s MOBILE PHONE APPLICATIONS s DC-DC CONVERTERS s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM() Ptot Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Value 20 20 ± 10 3 1.9 12 1.6 Unit V V V A A A W () Pulse width limited by safe operating area. May 2003 . Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed 1/8 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr STT4PF20V THERMAL DATA Rthj-amb Tj Tstg (*)Thermal Resistance Junction-ambient Maximum Opera...