2SC1846

Power Transistors 2SC1846 Silicon NPN epitaxial planar type For medium output power amplification Complementary to 2SA0885 φ 3.16±0.1 8.0+–00..15 Unit: mm 3.2±0.2 3.8±0.3 11.0±0.5 ■ Features 3.05±0.1 Low collector-emitter saturation voltage VCE(sat) Output of 3 W can be obtained by a complementary pair with 2SA0885 TO-126B package which requires no insulation plate for installation to the heat sink 1.9±0.1 16.0±1.0 / ■ Absolute Maximum Ratings Ta = 25°C e e) Parameter Symbol Rating Unit c e. d typ Collector-base voltage (Emitter open) VCBO 45 V n d stag tinue Collector-emitter voltage (Base open) VCEO 35 V a e cle con Emitter-base voltage (Collector open) VEBO 5 V lifecy , dis Collector current IC 1 A n u duct typed Peak collector current ICP 1.5 A te tin Pro ed Collector power dissipation PC 1.2 W ur tinu 5.0 * ing fo iscon Junction temperature in n follow ed d Storage temperature Tj 150 °C Tstg −55 to +150 °C es plan Note) *: With a 100 × 100 × 2 mm Al heat sink a coed inclucde type, ■ Electrical Characteristics Ta = 25°C ± 3°C tinu nan Parameter Symbol Conditions M is iscon ainte Collector-base voltage (Emitter open) e/D e, m Collector-emitter voltage (Base open) D anc typ Collector-base cutoff current (Emitter open) inten nce Collector-emitter cutoff current (Base open) Ma tena Emitter-base cutoff current (Collector open) main Forward current transfer ratio (planed Collector-emitter saturation voltage VCBO VCEO ICBO IC...