TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC2236
Audio Power Amplifier Applications
2SC2236
Unit: mm...
TOSHIBA
Transistor Silicon
NPN Epitaxial Type (PCT Process)
2SC2236
Audio Power Amplifier Applications
2SC2236
Unit: mm
Complementary to 2SA966 and 3-watt output applications.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
1.5
A
Base current
IB
0.15
A
Collector power dissipation
PC
900
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note1: Using continuously under heavy loads (e.g. the application of high
JEDEC
TO-92MOD
temperature/current/voltage and the significant change in
JEITA
―
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-5J1A
operating temperature/current/voltage, etc.) are within the
Weight: 0.36 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2009-12-21
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-emi...