www.DataSheet.co.kr
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
DESCRIPTION ·Hi...
www.DataSheet.co.kr
INCHANGE Semiconductor
isc Product Specification
isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Voltage Capability ·High Current Capability ·Fast Switching Speed APPLICATIONS Designed for high-voltage,high-speed, power switching in inductive circuits where fall time is critical. They are particulary suited for line-operated swtchmode applications such as: ·Switching
regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits Absolute maximum ratings(Ta=25℃)
SYMBOL VCEV VCEO VEBO IC ICM IB
B
BUS48P
PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range
VALUE 850 400 7 15 30 5 20 150 175 -65~175
UNIT V V V A A A A W ℃ ℃
IBM PC Tj Tstg
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.0 UNIT ℃/W
isc Website:www.iscsemi.cn
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
INCHANGE Semiconductor
isc Product Specification
isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCE(sat)-1 VCE (sat)-2 VBE(sat) ICER ICEV IEBO hFE COB PARAMETER Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Satura...