Power Transistor. BUT11FI Datasheet


BUT11FI Transistor. Datasheet pdf. Equivalent


BUT11FI


Silicon NPN Power Transistor
www.DataSheet.co.kr

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BUT11FI

DESCRIPTION ·High Voltage ·High Speed Switching

·

APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL VCES VCEO VEBO IC ICM IB
B

PARAMETER Collector-Emitter Voltage VBE= 0 Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Base Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range

VALUE 850 400 9 5 10 2 4 35 150 -65~150

UNIT V V V A A A A W ℃ ℃

IBM PC Tj Tstg

THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 3.57 UNIT ℃/W

isc Website:www.iscsemi.cn

Datasheet pdf - http://www.DataSheet4U.net/

www.DataSheet.co.kr

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICES IEBO hFE-1 hFE-2 PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC= 0.1A; IB= 0 IC= 3A; IB= 0.6A
B

BUT11FI

MIN 400

TYP.

MAX

UNIT V

1.5 1.3 1.0 2.0 10 10 10 35 35

V V mA mA

IC= 3A; IB= 0.6A
B
...



BUT11FI
www.DataSheet.co.kr
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUT11FI
DESCRIPTION
·High Voltage
·High Speed Switching
APPLICATIONS
·Converters
·Inverters
·Switching regulators
·Motor control systems
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage VBE= 0
850
V
VCEO Collector-Emitter Voltage
400 V
VEBO
Emitter-Base Voltage
9V
IC Collector Current-Continuous
5A
ICM Collector Current-Peak
10 A
IBB Base Current
2A
IBM Base Current-Peak
PC
Collector Power Dissipation
@TC=25
Tj Junction Temperature
Tstg Storage Temperature Range
4
35
150
-65~150
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 3.57 /W
·
isc Websitewww.iscsemi.cn
Datasheet pdf - http://www.DataSheet4U.net/

BUT11FI
www.DataSheet.co.kr
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUT11FI
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=B 0.6A
VBE(sat) Base-Emitter Saturation Voltage
ICES Collector Cutoff Current
IEBO Emitter Cutoff Current
IC= 3A; IB=B 0.6A
VCE= 850V; VBE= 0
VCE= 850V; VBE= 0; Tj= 125
VEB= 9V; IC= 0
hFE-1
DC Current Gain
IC= 5mA; VCE= 5V
hFE-2
DC Current Gain
IC= 0.5A; VCE= 5V
Switching Times; Resistive Load
ton Turn-on Time
ts Storage Time
tf Fall Time
IC= 2.5A; IB1= -IB2= 0.5A;
VCC= 250V
MIN TYP. MAX UNIT
400 V
1.5 V
1.3 V
1.0
2.0
mA
10 mA
10 35
10 35
1.0 μs
4.0 μs
0.8 μs
isc Websitewww.iscsemi.cn
Datasheet pdf - http://www.DataSheet4U.net/




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