Ordering number:EN462E
NPN Epitaxial Planar Silicon Transistor
2SC2078
27MHz RF Power Amplifier Applications
Package D...
Ordering number:EN462E
NPN Epitaxial Planar Silicon
Transistor
2SC2078
27MHz RF Power Amplifier Applications
Package Dimensions
unit:mm 2010C
[2SC2078]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCER VEBO IC ICP PC
Tc=50˚C RBE=150Ω
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JEDEC : TO-220AB EIAJ : SC-46
1 : Base 2 : Collector 3 : Emitter
Conditions
Ratings 80 75 5 3 5 1.2 10 150 –55 to +150
Unit V V V A A W W
˚C ˚C
Tj Tstg
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat)
25
Conditions VCB=40V, IE=0 VEB=4V, IC=0 VCE=5V, IC=0.5A VCE=10V, IC=0.1A VCB=10V, f=1MHz IC=1A, IB=0.1A IC=1A, IB=0.1A
B 50 40 C 80 60 D 120 100
Ratings min typ max 10 10 25* 100 150 45 0.15 0.9
E 200
Unit µA µA MHz
200* 60 0.6 1.2 pF V V
* : The 2SC2078 are classified by 0.5A hFE as follows :
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to re...