P-Channel Silicon MOSFET
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Ordering number : ENA1531
SCH1333
SANYO Semiconductors
DATA SHEET
SCH1333
Features
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P-Chann...
Description
www.DataSheet.co.kr
Ordering number : ENA1531
SCH1333
SANYO Semiconductors
DATA SHEET
SCH1333
Features
P-Channel Silicon MOSFET
General-Purpose Switching Device Applications
1.8V drive. Halogen free compliance.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Conditions Ratings --20 ±10 -2 --8 0.8 150 --55 to +150 Unit V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Conditions ID=--1mA, VGS=0V VDS=--20V, VGS=0V VGS=±8V, VDS=0V VDS=--10V, ID=--1mA VDS=--10V, ID=--1A ID=--1A, VGS=--4.5V ID=--0.5A, VGS=--2.5V ID=--0.1A, VGS=--1.8V --0.4 2.7 100 140 210 130 196 315 Ratings min --20 --1 ±10 --1.4 typ max Unit V μA μA V S mΩ mΩ mΩ
Marking : YJ
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