Power MOSFET
www.vishay.com
IRF510S, SiHF510S
Vishay Siliconix
Power MOSFET
D D2PAK (TO-263)
G
GD S
S N-Channel MOSFET
PRODUCT...
Description
www.vishay.com
IRF510S, SiHF510S
Vishay Siliconix
Power MOSFET
D D2PAK (TO-263)
G
GD S
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
100 VGS = 10 V
8.3 2.3 3.8 Single
0.54
FEATURES
Surface-mount
Available in tape and reel
Dynamic dv/dt rating Repetitive avalanche rated
Available
175 °C operating temperature Fast switching
Available
Ease of paralleling
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details
DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The D2PAK (TO-263) is a surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface-mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface-mount application.
ORDERING INFORMATION
Package Lead (Pb)-free and halogen-free Lead (Pb)-free Note a. See device orientation
D2P...
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