2SC2148

DATA SHEET SILICON TRANSISTORS 2SC2148, 2SC2149 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC2148, 2SC2149 are economical microwave transistors encapsulated into new hermetic stripline packages, "micro X". These are designed for small signal amplifier, low noise amplifier, and oscillator applications in the L to C band, and CML circuit use. 4.0 MIN. PACKAGE DIMENSIONS (Unit : mm) 1 0.5±0.05 0.1−0.03 +0.06 FEATURES 2SC2148 NF: 2.1 dB TYP. @f = 500 MHz 2SC2149 NF: 2.6 dB TYP. @f = 2.0 GHz 4.0 MIN. 2 4.0 MIN. 4 3 0.5±0.05 2.55±0.2 φ 2.1 1.8 MAX. 0.55 1. 2. 3. 4. Emitter Collector Emitter Base Derating curves of the 2SC2148, 2SC2149. The maximum junction temperature of these transistors is allowed up to 200 °C, but the ambient or storage temperature is limitted to 150 °C. The operating junction temperature is estimated with power consumption (PT) and thermal resistance mentioned on these derating curves. The information in this document is subject to change without notice. Document No. P11809EJ2V0DS00 (2nd edition) (Previous No. TC-1428) Date Published August 1996 P Printed in Japan 4.0 MIN. 45° © 1981 2SC2148, 2SC2149 2SC2148 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 500 400 300 200 100 0 PT−Total Power Dissipation−mW with infinite heat sink; Rth(j-c) 130 °C/W mounting on ceramic boad with solder (Al2O3 20 × 50 × 0.635 mm) ; Rth(j-a) 190 °C/W free-air; Rth(j-a) 610 °C/W 50 100 150 200 48 TA−Ambient Temperature−°...