DATA SHEET
SILICON TRANSISTORS
2SC2148, 2SC2149
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
DESCRI...
DATA SHEET
SILICON
TRANSISTORS
2SC2148, 2SC2149
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL
TRANSISTOR
DESCRIPTION
The 2SC2148, 2SC2149 are economical microwave
transistors encapsulated into new hermetic stripline packages, "micro X". These are designed for small signal amplifier, low noise amplifier, and oscillator applications in the L to C band, and CML circuit use.
4.0 MIN.
PACKAGE DIMENSIONS
(Unit : mm)
1
0.5±0.05 0.1−0.03
+0.06
FEATURES
2SC2148 NF: 2.1 dB TYP. @f = 500 MHz 2SC2149 NF: 2.6 dB TYP. @f = 2.0 GHz
4.0 MIN. 2
4.0 MIN. 4
3 0.5±0.05 2.55±0.2 φ 2.1
1.8 MAX. 0.55
1. 2. 3. 4.
Emitter Collector Emitter Base
Derating curves of the 2SC2148, 2SC2149.
The maximum junction temperature of these
transistors is allowed up to 200 °C, but the ambient or storage temperature is limitted to 150 °C. The operating junction temperature is estimated with power consumption (PT) and thermal resistance mentioned on these derating curves.
The information in this document is subject to change without notice. Document No. P11809EJ2V0DS00 (2nd edition) (Previous No. TC-1428) Date Published August 1996 P Printed in Japan
4.0 MIN.
45°
©
1981
2SC2148, 2SC2149
2SC2148
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
500 400 300 200 100 0
PT−Total Power Dissipation−mW
with infinite heat sink; Rth(j-c) 130 °C/W mounting on ceramic boad with solder (Al2O3 20 × 50 × 0.635 mm) ; Rth(j-a) 190 °C/W
free-air; Rth(j-a) 610 °C/W
50
100
150
200
48 TA−Ambient Temperature−°...