2SC2206

Transistors 2SC2206 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm Complementary to 2SA1254 ■ Features (0.4) 6.9±0.1 (1.5) (1.5) 2.5±0.1 (1.0) (1.0) 4.5±0.1 3.5±0.1 Optimum for RF amplification of FM/AM radios R 0.9 High transition frequency fT R 0.7 M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board 4.1±0.2 / ■ Absolute Maximum Ratings Ta = 25°C 1.0±0.1 2.4±0.2 (0.85) 0.55±0.1 0.45±0.05 2.0±0.2 e Parameter Symbol Rating Unit c type) Collector-base voltage (Emitter open) VCBO 30 1.25±0.05 V n d ge. ed Collector-emitter voltage (Base open) VCEO 20 V sta tinu Emitter-base voltage (Collector open) VEBO 5 V a e cycle iscon Collector current IC 30 mA life d, d Peak collector current ICP 60 mA n u duct type Collector power dissipation PC 400 mW te tin Pro ued Junction temperature Tj 150 °C four ntin Storage temperature Tstg −55 to +150 °C 3 2 1 (2.5) (2.5) 1: Base 2: Collector 3: Emitter M-A1 Package in n s followliannged disco ■ Electrical Characteristics Ta = 25°C ± 3°C a o lude e, p Parameter Symbol Conditions Min Typ Max Unit c d inc e typ Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 30 V tinue anc Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 20 V M is con inten Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 5 V /Dis ma Base-emitter voltage VBE VCE = 10 V, ...