TF202B

www.DataSheet.co.kr Ordering number : ENA0201 TF202B TF202B Features N-channel Silicon Junction FET Condenser Microphone Applications Especially suited for use in condenser microphone for audio equipments and telephones. TF202B is possible to make applied sets smaller and thinner Excellent voltage characteristic. Excellent transient characteristic. Adoption of FBET process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VGDO IG ID PD Tj Tstg Conditions Ratings --20 10 1 100 150 --55 to +150 Unit V mA mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Gate-to-Drain Breakdown Voltage Cutoff Voltage Zero-Gate Voltage Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Voltage Gain Reduced Voltage Characteristics Symbol V(BR)GDO VGS(off) IDSS yfs Ciss Crss Conditions IG=--100µA VDS=5V, ID=1µA VDS=5V, VGS=0V VDS=5V, VGS=0V, f=1kHz VDS=5V, VGS=0V, f=1MHz Ratings min --20 -0.2 140* 0.5 1.2 3.5 0.65 --3.0 --1.2 --3.5 --0.6 --1.2 350* typ max Unit V V µA mS pF pF dB dB VDS=5V, VGS=0V, f=1MHz [Ta=25˚C, VCC=4.5V, RL=1kΩ, Cin=15pF, See specified Test Circuit.] GV ∆GVV VIN=10mV, f=1kHz VIN=10mV, f=1kHz, VCC=4.5→1.5V Continued on next page. * : The TF202B is classified by IDSS as follows : (unit : µA) Rank IDSS E4 140 to 240 E5 210 to 350 Marking : E Any and all SANYO products describ...