2SC2209

Power Transistors 2SC2209 Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SA0963 120° 7.5+–00..15 Unit: mm 2.9±0.2 2.3±0.2 3.8±0.3 11.0±0.5 ■ Features 3.05±0.1 Large collector power dissipation PC Output of 5 W can be obtained by a complementary pair with 2SA0963 ■ Absolute Maximum Ratings Ta = 25°C 1.9±0.1 16.0±1.0 / Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 50 V c type Collector-emitter voltage (Base open) VCEO 40 V n d tage. ued Emitter-base voltage (Collector open) VEBO 5 V le s ntin Collector current IC 1.5 A a e cyc isco Peak collector current n u t life ed, d Collector power dissipation * ICP 3 A PC 10 W duc typ Junction temperature te tin ur Pro tinued Storage temperature Tj 150 °C Tstg −55 to +150 °C g fo con Note) *: TC = 25°C 0.75±0.1 0.5±0.1 4.6±0.2 2.3±0.2 123 0.5±0.1 1.26±0.1 1: Emitter 2: Collector 3: Base TO-126A-A1 Package in n s followlianned dis ■ Electrical Characteristics Ta = 25°C ± 3°C a o lude e, p Parameter Symbol Conditions inc typ Collector-base voltage (Emitter open) c tinued ance Collector-emitter voltage (Base open) M is con inten Collector-base cutoff current (Emitter open) /Dis ma Collector-emitter cutoff current (Base open) D ance type, Emitter-base cutoff current (Collector open) ten ce Forward current transfer ratio *1, 2 ain nan Collector-emitter saturation voltage M ainte Base-emitter saturation voltage d m Tr...