TIG062E8

www.DataSheet.co.kr Ordering number : ENA1480A TIG062E8 SANYO Semiconductors DATA SHEET TIG062E8 Features N-Channel IGBT Light-Controlling Flash Applications Low-saturation voltage. Low voltage drive (3V). Enhansment type. Built-in Gate-to-Emitter protection diode. Mounting Height 0.9mm, Mounting Area 8.12mm2. dv / dt guarantee*. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Emitter Voltage Gate-to-Emitter Voltage (DC) Gate-to-Emitter Voltage (Pulse) Collector Current (Pulse) Maximum Collector-to-Emitter dv / dt Channel Temperature Storage Temperature Symbol VCES VGES VGES ICP1 ICP2 ICP3 dVCE / dt Tch Tstg PW≤1ms CM=150μF, VGE=3V CM=100μF, VGE=3.3V CM=100μF, VGE=4V VCE≤320V, starting Tch=25°C Conditions Ratings 400 ±6 ±8 100 130 150 400 150 -40 to +150 Unit V V V A A A V / μs °C °C Marking : ZC * : Concerning dv / dt (slope of Collector Voltage at the time of Turn-OFF), dv / dt > 400V / μs will be 100% screen-detected in the circuit shown as Fig. 1. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control ...